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| SLD322XT 0.5W High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure2. Fine adjustment of the oscillation wavelength is possible by controlling the temperature using the built-in TE cooler (Peltier element). 1 MOCVD: Metal Organic Chemical Vapor Deposition 2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features * High power Recommended optical power output: Po = 0.5W * Low operating current: Iop = 0.75A (Po = 0.5W) * Flat package with built-in photodiode, TE cooler, and thermistor Applications * Solid state laser excitation * Medical use * Material processes * Measurement Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25C Absolute Maximum Ratings (Tth = 25C) * Optical power output Po * Reverse voltage VR LD PD * Operating temperature (Tth) Topr * Storage temperature Tstg Equivalent Circuit TE Cooler N P TH LD PD 1 2 3 4 5 6 7 8 Pin Configuration (Top View) No. 1 2 3 4 5 6 7 8 W V V C C Function TE cooler (negative) Thermistor lead 1 Thermistor lead 2 Laser diode (anode) Laser diode (cathode) Photodiode (cathode) Photodiode (anode) TE cooler (positive) 0.55 2 15 -10 to +30 -40 to +85 Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E93206B02-PS SLD322XT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Monitor current Radiation angle Perpendicular Parallel Positional accuracy Differential efficiency Thermistor resistance Position Angle Symbol Ith Iop Vop p Imon // X, Y D Rth PO = 0.5W PO = 0.5W PO = 0.5W PO = 0.5W VR = 10V PO = 0.5W Conditions (Tth: Thermistor temperature, Tth = 25C) Min. Typ. 0.18 0.75 2.1 790 0.15 20 4 0.8 30 9 Max. 0.3 1.2 3.0 840 3.0 40 17 100 3 PO = 0.5W Tth = 25C 0.5 0.9 10 Unit A A V nm mA degree degree m degree W/A k PO = 0.5W Wavelength Selection Classification Type SLD322XT-1 SLD322XT-2 SLD322XT-3 Type SLD322XT-21 SLD322XT-24 SLD322XT-25 Wavelength (nm) 795 5 810 10 830 10 Wavelength (nm) 798 3 807 3 810 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device -2- SLD322XT Example of Representative Characteristics Optical power output vs. Forward current characteristics 1000 Tth = 0C Po - Optical power output [mW] 800 Tth = 0C 600 Tth = -10C Tth = 30C 400 Tth = 25C Po - Optical power output [mW] 500 Tth = -10C Tth = 30C Optical power output vs. Monitor current characteristics Tth = 25C 250 200 0 200 400 600 800 1000 0 0 0.5 Imon - Monitor current [mA] 1.0 IF - Forward current [mA] Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (Parallel to junction) Tth = 25C Ith - Threshold current [mA] 500 Radiation intensity (optional scale) PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 100 -10 0 10 20 30 -90 -60 -30 0 30 60 90 Tth - Thermistor temperature [C] Angle [degree] Power dependence of far field pattern (Perpendicular to junction) Tth = 25C Radiation intensity (optional scale) Temperature dependence of far field pattern (Parallel to junction) PO = 500mW Radiation intensity (optional scale) -90 -60 -30 0 PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 30 60 90 Tth = 25C Tth = 10C Tth = -5C -90 -60 -30 0 30 60 90 Angle [degree] Angle [degree] -3- SLD322XT Temperature dependence of far field pattern (Perpendicular to junction) 820 PO = 500mW Radiation intensity (optional scale) Dependence of wavelength Po = 500mW lp - Wavelength [nm] Tth = 25C Tth = 10C Tth = -5C -60 -30 0 30 60 90 810 800 -90 790 -10 0 10 20 30 Angle [degree] Tth - Thermistor temperature [C] Differential efficiency vs. Temperature characteristics 50 D - Differential efficiency [W/A] 1.0 Rth - Thermistor resistance [k] Thermistor characteristics 10 0.5 5 0 -10 0 10 20 30 1 -10 0 10 20 30 40 50 60 70 Tth - Thermistor temperature [C] Tth - Thermistor temperature [C] TE cooler characteristics TE cooler characteristics 1 10 Tc = 33C 10 Tth = 25C TE cooler characteristics 2 Q - Absorbed heat [W] Q - Absorbed heat [W] VT - Pin voltage [V] 2.0A 5 5 4 5 5 1.5A 4 3 2 1.5A 1.0A 3 2 1.0A T 0.5A 0. 0 0 0.5A 0. 5A VS 2.0A 2. 5A 1 0 1. Q 2.0A 2. 0A 1.5A 50 1 5A 5A 0 0 50 100 100 0 T - Temperature difference [C] T: Tc - Tth Tth: Thermistor temperature Tc: Case temperature T [C] -4- VT - Pin voltage [V] T VS VT IT = 2.5A T VS V IT = 2.5A 2.0A T VS 1. 5A 1. 0A Q SLD322XT Power dependence of spectrum 1.0 Tth = 25C Po = 0.2W 0.8 Relative radiant intensity Relative radiant intensity 1.0 Tth = 25C Po = 0.3W 0.8 0.6 0.6 0.4 0.4 0.2 0.2 796 798 800 802 804 796 798 800 802 804 Wavelength [nm] Wavelength [nm] 1.0 Tth = 25C Po = 0.4W 0.8 Relative radiant intensity Relative radiant intensity 1.0 Tth = 25C Po = 0.5W 0.8 0.6 0.6 0.4 0.4 0.2 0.2 796 798 800 802 804 796 798 800 802 804 Wavelength [nm] Wavelength [nm] -5- SLD322XT Temperature dependence of spectrum (Po = 0.5W) 1.0 Tth = -10C 0.8 Relative radiant intensity Relative radiant intensity 0.8 1.0 Tth = 0C 0.6 0.6 0.4 0.4 0.2 0.2 785 790 795 800 805 810 815 785 790 795 800 805 810 815 Wavelength [nm] Wavelength [nm] 1.0 Tth = 25C 0.8 Relative radiant intensity Relative radiant intensity 1.0 Tth = 30C 0.8 0.6 0.6 0.4 0.4 0.2 0.2 785 790 795 800 805 810 815 785 790 795 800 805 810 815 Wavelength [nm] Wavelength [nm] -6- SLD322XT Package Outline Unit: mm M - 273(LO - 10) + 0.05 4 - O3.0 0 33.0 0.05 14.0 O5.0 Window Glass 15.0 0.05 * 7.5 0.1 4 - R1.2 0.3 8 - O0.6 2.54 38.0 0.5 0.65MAX LD Chip 19.0 28.0 0.5 + 2.0 8.0 - 1.0 Reference Plane 28.0 0.5 7.5 0.2 11.35 0.1 10.4 *16.5 0.1 *Distance between pilot hole and emittng area PACKAGE STRUCTURE SONY CODE EIAJ CODE JEDEC CODE M-273(LO-10) PACKAGE WEIGHT 43g -7- 3.0 Sony Corporation |
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